DRAFALL; LARRY E (Total 18 Patents Found)

A crucible in which a semiconductor material is melted and held during a crystal growing process. The crucible includes a body of vitreous silica having a bottom wall and a sidewall formation extending up from the bottom wall and defining a cavity for holding the molten semiconductor material. The sidewall formation ha...
A Czochralski method of producing a single crystal silicon ingot having a uniform thermal history from a silicon melt contained in a crucible coaxial with the ingot. In the process the pulling rate of the end-cone of the ingot is maintained at a relatively constant rate which is comparable to the pulling rate for the s...
A crystal puller for growing monocrystalline silicon ingots according to the Czochralski method includes a housing and a crucible in the housing for containing molten silicon. The crucible has a side wall having a transmittance of at least about 80% generally throughout a light wavelength range of about 500 to about 25...
A crucible in which a semiconductor material is melted and held during a crystal growing process. The crucible includes a body of vitreous silica having a bottom wall and a sidewall formation extending up from the bottom wall and defining a cavity for holding the molten semiconductor material. The sidewall formation ha...
一种加固直拉工艺中容纳熔融半导体材料的坩埚和阻止此工艺中位错形成的方法,所说坩埚包括有内外表面的底壁和侧壁及其构成的腔的石英本体,在低于约600℃温度下,在侧壁内表面上淀积第一反玻璃化促进剂,淀积是这样的:将坩埚加热...
A Czochralski method of producing a single crystal silicon ingot (26) having a uniform thermal history from a silicon melt (16) contained in a crucible (12) coaxial with the ingot (26). In the process the pulling rate of the end-cone (30) of the ingot (26) is maintained at a relatively constant rate which is comparable...
A method of reinforcing a crucible for the containment of molten semiconductor material in a Czochralski process, and of inhibiting formation of dislocations within a single crystal grown by the process. The crucible includes a body of vitreous silica having a bottom wall and a sidewall formation extending up from the ...
A process is described for controlling the thermal history of a single crystal silicon ingot (26) during a crystal growth process in which the silicon ingot (26) is rotated and pulled from a silicon melt (16) contained within a rotating crucible (12) in accordance with the Czochralski technique. The ingot (26) has, in ...
A process is described for controlling the thermal history of a single crystal silicon ingot (26) during a crystal growth process in which the silicon ingot (26) is rotated and pulled from a silicon melt (16) contained within a rotating crucible (12) in accordance with the Czochralski technique. The ingot (26) has, in ...
一种加固直拉工艺中容纳熔融半导体材料的坩埚和阻止此工艺中位错形成的方法,所说坩埚包括有内外表面的底壁和侧壁及其构成的腔的石英本体,在低于约600℃温度下,在侧壁内表面上淀积第一反玻璃化促进剂,淀积是这样的:将坩埚加热...
A method of reinforcing a crucible for the containment of molten semiconductor material in a Czochralski process, and of inhibiting formation of dislocations within a single crystal grown by the process. The crucible includes a body of vitreous silica having a bottom wall and a sidewall formation extending up from the ...